Free Carrier Saturation in Semiconductors

Saturation in Semiconductors

For different models of the electron-phonon interaction, the asymptotic behaviour of the moments of the stationary homogeneous solution of the linear Boltzmann equation is determined in the limit of a high external field. For Hilbert-Schmidt kernels of a finite rank, a result recently proven for kernels of rank one is found generally valid; as a consequence velocity saturation is excluded for t...

Saturation of the free carrier absorption in ZnTe crystals.

This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm(2)), the concentration of free carriers gradually increases and the THz output power is saturated, as clearly demonstrated by the time delay in the THz temporal waveforms, the changes in the THz ...

Excess Carrier Phenomenon in Semiconductors

Charge-carrier transport in amorphous organic semiconductors

Organic semiconductors have been extensively studied ever since the successful fabrication of organic light-emitting diodes (OLED).4 2-44 Due to their success, it is becoming increasingly important to understand the theory behind the properties of organic materials. In order to exploit all the advantages of implementing organic materials to construct devices, a detailed understanding of charge-...

Carrier heating in disordered organic semiconductors

We propose a semi-implicit model for hopping transport in disordered media with application to organic semiconductors. The results show excellent agreement with both Monte Carlo and standard master-equation calculations. In organic LEDs the applied field would result in heating of the charge carrier population by up to 100 °C above the lattice temperature and is more effective at lower temperat...